Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

標題:	Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
作者:	Wu, YH Chen, WJ Chang, SL Chin, A Gwo, S Tsai, C 物理研究所電子工程學系及電子研究所 Institute of Physics Department of Electronics Engineering and Institute of Electronics
關鍵字:	epitaxial CoSi2;HF pretreatment
公開日期:	1-七月-1999
摘要:	We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed hy scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.
URI:	http://dx.doi.org/10.1109/55.772363 http://hdl.handle.net/11536/31240
ISSN:	0741-3106
DOI:	10.1109/55.772363
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	20
Issue:	7
起始頁:	320
結束頁:	322
顯示於類別：	期刊論文

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