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公開日期標題作者
1995Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixturesChang, KM; Tsai, JY; Yeh, CB; Yeh, TH; Wang, SW; Jou, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surfaceChang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH; 奈米中心; Nano Facility Center
1-八月-1998The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stressChang, KM; Li, CH; Wang, SW; Yeh, TH; Yang, JY; Lee, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integrationChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integrationChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 21 到 25 筆資料，總共 25 筆 < 上一頁