Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures

Title:	Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures
Authors:	Chang, KM Tsai, JY Yeh, CB Yeh, TH Wang, SW Jou, MJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1995
URI:	http://hdl.handle.net/11536/19963
Journal:	ISIC-95 - 6TH INTERNATIONAL SYMPOSIUM ON IC TECHNOLOGY, SYSTEMS & APPLICATIONS, PROCEEDINGS
Begin Page:	194
End Page:	198
Appears in Collections:	Conferences Paper