Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures

標題:	Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures
作者:	Chang, KM Tsai, JY Yeh, CB Yeh, TH Wang, SW Jou, MJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1995
URI:	http://hdl.handle.net/11536/19963
期刊:	ISIC-95 - 6TH INTERNATIONAL SYMPOSIUM ON IC TECHNOLOGY, SYSTEMS & APPLICATIONS, PROCEEDINGS
起始頁:	194
結束頁:	198
顯示於類別：	會議論文