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公開日期標題作者
1-十二月-2004Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxyHsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF; 電子物理學系; Department of Electrophysics
1-二月-2000Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescenceChen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF; 電子物理學系; Department of Electrophysics
3-十月-2005Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profilingChen, JF; Hsiao, RS; Chen, YP; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-三月-1996Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor depositionWang, PY; Chen, JF; Chen, WK; 電子物理學系; Department of Electrophysics
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; Department of Electrophysics
1-十月-2005Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAsChen, JF; Hsiao, RS; Hsieh, MT; Huang, WD; Guo, PS; Lee, WI; Lee, SC; Lee, CL; 電子物理學系; Department of Electrophysics
1-三月-1999Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum wellWang, PY; Chen, JF; Wang, JS; Chen, NC; Chen, YS; 電子物理學系; Department of Electrophysics
1-六月-2006Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodesChu, TY; Chen, SY; Chen, JF; Chen, CH; 電子物理學系; 顯示科技研究所; 友訊交大聯合研發中心; Department of Electrophysics; Institute of Display; D Link NCTU Joint Res Ctr
1-三月-2000Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodesChen, JF; Chen, NC; Wang, JS; Wang, PY; 電子物理學系; Department of Electrophysics
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