標題: | Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes |
作者: | Chen, JF Chen, NC Wang, JS Wang, PY 電子物理學系 Department of Electrophysics |
關鍵字: | In0.2Ga0.8As/GaAs Schottky diodes;capacitance dispersion;deep traps |
公開日期: | 1-三月-2000 |
摘要: | Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance. |
URI: | http://dx.doi.org/10.1143/JJAP.39.1102 http://hdl.handle.net/11536/30708 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.39.1102 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 39 |
Issue: | 3A |
起始頁: | 1102 |
結束頁: | 1103 |
顯示於類別: | 期刊論文 |