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公開日期標題作者
2009A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise MeasurementLin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term StressHsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyondChung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A New Variation Plot to Examine the Interfacial-dipole Induced Work-function Variation in Advanced High-k Metal-gate CMOS DevicesHsieh, E. R.; Wang, Y. D.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Hsu, S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power ReductionZhou, Keji; Xue, Xiaoyong; Yang, Jianguo; Xu, Xiaoxin; Lv, Hangbing; Wang, Mingyu; Jing, Ming'e; Liu, Wenjun; Zeng, Xiaoyang; Chung, Steve S.; Li, Jing; Liu, Ming; 交大名義發表; National Chiao Tung University
1-一月-2019A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 10(12) EnduranceHsieh, E. R.; Chang, H. Y.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert; Wong, S. Simon; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)Xiao, Y.; Hsieh, E. R.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2017A Novel Design of P-N Staggered Face-tunneling TFET Targeting for Low Power and Appropriate Performance ApplicationsHsieh, E. R.; Fan, Y. C.; Chang, K. Y.; Liu, C. H.; Chien, C. H.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A Novel One Transistor Non-volatile Memory Feasible for NOR and NAND Applications in IoT EraChung, Steve S.; Hsieh, E. R.; Yang, S. P.; Chuang, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A Novel One Transistor Resistance-Gate Nonvolatile MemoryChung, Steve S.; Hsieh, E. R.; Yang, S. P.; Chuang, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded ApplicationsCheng, H. W.; Hsieh, E. R.; Huang, Z. H.; Chuang, C. H.; Chen, C. H.; Li, F. L.; Lo, Y. M.; Liu, C. H.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retentionChung, Steve S.; Tseng, Y. H.; Lai, C. S.; Hsu, Y. Y.; Ho, Eric; Chen, Terry; Peng, L. C.; Chu, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS DevicesWu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008The Observation of Trapping and Detrapping Effects in High-k Gate Dielectric MOSFETs by a New Gate Current Random Telegraph Noise (I(G)-RTN) ApproachChang, C. M.; Chung, Steve S.; Hsieh, Y. S.; Cheng, L. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013The Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access MemoryHuang, Y. J.; Chung, Steve S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013The Process and Stress-Induced Variability Issues of Trigate CMOS DevicesChung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2010The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistorsHsieh, E. R.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014The Random Dopant and Gate Oxide Variations in Trigate MOSFETsChung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Recent Advances of RTN Technique Towards the Understanding of the Gate Dielectric Reliability in Trigate FinFETsChung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Reliability issues for high performance nanoscale CMOS technologies with channel mobility enhancing schemesChung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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