國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Center for Nanoscience and Technology

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公開日期	標題	作者
2007	Temperature dependence of the excess noise of a GaN nanowire device	Li, L. C.; Huang, S. Y.; Wei, J. A.; Suen, Y. W.; Lee, M. W.; Hsieh, W. H.; Liu, T. W.; Chen, C. C.; 奈米科技中心; Center for Nanoscience and Technology
2007	Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors	Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.; 機械工程學系; 奈米科技中心; Department of Mechanical Engineering; Center for Nanoscience and Technology
1-二月-2005	Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices	Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
17-四月-2006	Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots	Sun, KW; Kechiantz, A; Lee, BC; Lee, CP; 應用化學系; 應用化學系分子科學碩博班; 電子工程學系及電子研究所; 奈米科技中心; Department of Applied Chemistry; Institute of Molecular science; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
28-六月-2005	Using a solution crystal growth method to grow arrays of aligned, individually distinct, single-crystalline TiO2 nanoneedles within nanocavities	Weng, CC; Chen, CP; Ting, CH; Wei, KH; 材料科學與工程學系; 奈米科技中心; Department of Materials Science and Engineering; Center for Nanoscience and Technology
1-十月-2005	Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric	Chiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1-十一月-2005	Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer	Kao, HL; Hung, BF; Chin, A; Lai, JM; Lee, CF; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology

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