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公開日期標題作者
七月-2016Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETsHsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chuang, Shang-Shiun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2014Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A ReviewLee, Yao-Jen; Cho, Ta-Chun; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lu, Yu-Lun; Sung, Po-Jung; Chen, Hsiu-Chih; Current, Michael I.; Tseng, Tseung-Yuen; Chao, Tien-Sheng; Hu, Chenming; Yang, Fu-Liang; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact ResistanceBorland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS DevicesChuang, Shang-Shiun; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Chen, Henry J. H.; Lee, Yao-Jen; Current, Michael I.; Tseng, Tseung-Yuen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2009以低溫微波活化鍺薄膜摻雜之研究莊尚勳; Chuang, Shang-Shiun; 羅正忠; Lou, Jen-Chung; 電子研究所
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