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Showing results 3 to 13 of 13 < previous 
Issue DateTitleAuthor(s)
1-Dec-2010DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar TransistorsChen, Shu-Han; Chang, Chao-Min; Chiang, Pei-Yi; Wang, Sheng-Yu; Chang, Wen-Hao; Chyi, Jen-Inn; 電子物理學系; Department of Electrophysics
14-Sep-2009Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory filmsWang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Sep-2009Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory filmsWang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2011Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM applicationWang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2011Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM applicationWang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010Multilevel resistive switching in Ti/Cu(x)O/Pt memory devicesWang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010Multilevel resistive switching in Ti/CuxO/Pt memory devicesWang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO(2) Thin FilmsLee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin FilmsLee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2013Unipolar Resistive Switching in ZrO2 Thin FilmsZhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2010二元金屬氧化物應用於電阻式記憶體之界面特性研究王聖裕; Wang, Sheng-Yu; 曾俊元; Tseng, Tseung-Yuen; 電子研究所
Showing results 3 to 13 of 13 < previous