Browsing by Author Chang, TE

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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
1997Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1998Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Aug-1997Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transientChiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Field enhanced oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueWang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Investigation of oxide charge trapping and detrapping in a n-MOSFETWang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1996Mechanisms and characteristics of oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1996A new technique to extract oxide trap time constants in MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFETWang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics