Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

標題:	Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
作者:	Wang, TH Chang, TE Chiang, LP Huang, CM Guo, JC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1996
URI:	http://hdl.handle.net/11536/19878
ISBN:	0-7803-3343-8
期刊:	1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS
起始頁:	232
結束頁:	233
顯示於類別：	會議論文