Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, TH	en_US
dc.contributor.author	Chang, TE	en_US
dc.contributor.author	Chiang, LP	en_US
dc.contributor.author	Huang, CM	en_US
dc.contributor.author	Guo, JC	en_US
dc.date.accessioned	2014-12-08T15:27:37Z	-
dc.date.available	2014-12-08T15:27:37Z	-
dc.date.issued	1996	en_US
dc.identifier.isbn	0-7803-3343-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19878	-
dc.language.iso	en_US	en_US
dc.title	Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	232	en_US
dc.citation.epage	233	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996BF88S00094	-
顯示於類別：	會議論文