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Issue DateTitleAuthor(s)
24-Oct-2005Ab initio molecular orbital study of 1,3,5-triazine derivatives for phosphorescent organic light emitting devicesChu, TY; Ho, MH; Chen, JF; Chen, CH; 電子物理學系; 應用化學系; 友訊交大聯合研發中心; Department of Electrophysics; Department of Applied Chemistry; D Link NCTU Joint Res Ctr
1-Jan-2000Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structuresChen, JF; Wang, JS; Wang, PY; Chen, NC; Hsu, NC; 電子物理學系; Department of Electrophysics
1-Jul-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-Jul-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
17-Apr-2000Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopyChen, JF; Wang, JS; Huang, MM; Chen, NC; 電子物理學系; Department of Electrophysics
1-May-2001Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAsChen, JF; Huang, MM; Wang, JS; 電子物理學系; Department of Electrophysics
1-Dec-1999Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperaturesChen, JF; Chen, NC; Wang, PY; Wang, JS; Weng, CM; 電子物理學系; Department of Electrophysics
1-Feb-2000Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodesChen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC; 電子物理學系; Department of Electrophysics
6-Nov-2000Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dotsWang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ; 電子物理學系; Department of Electrophysics
1-Jul-2005Characterization of electron emission from relaxed InAs quantum dots capped with InGaAsChen, JF; Hsiao, RS; Wang, CK; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
7-Mar-2005Characterization of electronic structure of aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) for phosphorescent organic light emitting devicesChu, TY; Wu, YS; Chen, JF; Chen, CH; 電子物理學系; 應用化學系; 顯示科技研究所; Department of Electrophysics; Department of Applied Chemistry; Institute of Display
15-Apr-2005Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopyChang, KP; Yang, SL; Chuu, DS; Hsiao, RS; Chen, JF; Wei, L; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
23-Sep-1996Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopyChen, JF; Chen, NC; Liu, HS; 電子物理學系; Department of Electrophysics
23-Sep-1996Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopyChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-Dec-2005Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasersWang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF; 電子物理學系; Department of Electrophysics
1-Jul-1996Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxyChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-Nov-1996Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodesChen, JF; Chen, NC; Liu, HS; 電子物理學系; Department of Electrophysics
1-Nov-1996Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodesChen, JF; Chen, NC; Liu, HS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-Feb-2001Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodesChen, JF; Chen, NC; Wang, JS; Chen, YF; 電子物理學系; Department of Electrophysics
15-Jun-2006Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wellsChen, JF; Hsiao, RS; Hsieh, PC; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
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