標題: Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
作者: Chen, JF
Chen, NC
Liu, HS
電子物理學系
Department of Electrophysics
關鍵字: deep levels;GaSb Schottky diodes;Hall measurement;photoluminescence (PL);SnTe dopants
公開日期: 1-十一月-1996
摘要: The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.
URI: http://dx.doi.org/10.1007/s11664-996-0037-9
http://hdl.handle.net/11536/149354
ISSN: 0361-5235
DOI: 10.1007/s11664-996-0037-9
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 25
起始頁: 1790
結束頁: 1796
顯示於類別:期刊論文