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Issue DateTitleAuthor(s)
1-Oct-2015Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applicationsHsieh, Ting-En; Lin, Yueh-Chin; Liao, Jen-Ting; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics
1-Dec-2015GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
1-Jul-2017Reliability improvement in GaN HEMT power device using a field plate approachWu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung; 材料科學與工程學系; 光電系統研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; International College of Semiconductor Technology
2014利用場效電板改善氮化鋁鎵/氮化鎵高電子遷移率電晶體高功率元件特性與可靠性之研究金秉頡; Chin, Ping-Chieh; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 光電系統研究所
Showing results 1 to 4 of 4