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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
1-Sep-1998The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrodeChang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
6-Jul-2004Decomposing K-n UP into trianglesFu, CM; Fu, HL; Rodger, CA; 應用數學系; Department of Applied Mathematics
1996Effects of oxygen content on the penetration depth in YBCO thin filmsHsieh, MC; Tseng, TY; Fu, CM; Wu, KH; Juang, JY; Uen, TM; Gou, YS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Apr-1996Effects of oxygen content on the penetration depth of pulsed laser deposited YBCO thin filmsHsieh, MC; Tseng, TY; Wei, SM; Fu, CM; Wu, KH; Juang, JY; Uen, TM; Gou, YS; 電子物理學系; 電控工程研究所; Department of Electrophysics; Institute of Electrical and Control Engineering
15-Aug-1997The minimum size of critical sets in latin squaresFu, CM; Fu, HL; Rodger, CA; 應用數學系; Department of Applied Mathematics
15-Aug-1997The minimum size of critical sets in latin squaresFu, CM; Fu, HL; Rodger, CA; 應用數學系; Department of Applied Mathematics
1996Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees CCheng, KL; Liu, CC; Fu, CM; Cheng, HC; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1998Preparation and electronic properties of YBa2Cu3Ox films with controlled oxygen stoichiometriesWu, KH; Hsieh, MC; Chen, SP; Chao, SC; Juang, JY; Uen, TM; Gou, YS; Tseng, TY; Fu, CM; Chen, JM; Liu, RG; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Apr-1997Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition techniqueChang, KM; Yeh, TH; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1997Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition techniqueChang, KM; Yeh, TH; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1999Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact systemChang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 11 of 11