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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
22-Jul-1999Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel meshChen, YA; Hsu, ML; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layerChen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1997Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctionsJen, TS; Shin, NF; Laih, LH; Chen, YA; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Jul-1998Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : HChen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1997Porous silicon light-emitting diode with tunable colorChen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7