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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
30-Sep-2002Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistorsChen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002The ANNIGMA-wrapper approach to fast feature selection for neural netsHsu, CN; Huang, HJ; Schuschel, D; 資訊工程學系; Department of Computer Science
1-Apr-2002Bayesian classification for data from the same unknown classHuang, HJ; Hsu, CN; 資訊工程學系; Department of Computer Science
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2001Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCMEHuang, HJ; Chen, KM; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2001Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxyHuang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Folded quarter-wave resonator filters with Chebyshev, flat group delay, or quasi-elliptical function responseChang, CY; Chen, CC; Huang, HJ; 電信工程研究所; Institute of Communications Engineering
1-Dec-2003Implications of the Dirichlet assumption for discretization of continuous variables in naive Bayesian classifiersHsu, CN; Huang, HJ; Wong, TT; 資訊工程學系; Department of Computer Science
1-Dec-2000Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structureHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2001Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drainHuang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2006A novel algorithm for uncertain portfolio selectionHuang, HJ; Tzeng, GH; Ong, CS; 運輸與物流管理系 註：原交通所+運管所; 科技管理研究所; Department of Transportation and Logistics Management; Institute of Management of Technology
15-Oct-2005A novel hybrid model for portfolio selectionOng, CS; Huang, HJ; Tzeng, GH; 科技管理研究所; Institute of Management of Technology
1-Mar-2001The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gateChen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2000Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drainHuang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A study of boron diffusion from selectively grown epitaxial silicon-germanium into silicon during rapid thermal annealingYang, TH; Chang, EY; Chen, KM; Chien, CH; Huang, HJ; Yang, TY; Chang, CY; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Aug-2000Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structuresHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 17 of 17