標題: | Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors |
作者: | Chen, KM Huang, GW Chiu, DY Huang, HJ Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 30-九月-2002 |
摘要: | Low-frequency noise in boron-doped polycrystalline silicon-germanium (poly-Si1-xGex) resistors at various temperatures is studied. The poly-Si1-xGex films with 0%similar to36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1-xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1511815 http://hdl.handle.net/11536/28515 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1511815 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 81 |
Issue: | 14 |
起始頁: | 2578 |
結束頁: | 2580 |
顯示於類別: | 期刊論文 |