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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
18-Oct-2004The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrodeLu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stackLu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2004HfO2 MIS capacitor with copper gate electrodePerng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Dec-2004High-density MIM capacitors with HfO(2) dielectricsPerng, TH; Chien, CH; Chen, CW; Lehnen, P; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2003High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memoryChien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY; 交大名義發表; National Chiao Tung University
1-Apr-2006Improved reliability of HfO2/SiON gate stack by fluorine incorporationLu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2005Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatmentLu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2005Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatmentLu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVDYang, MJ; Shieh, J; Hsu, SL; Huang, IJ; Leu, CC; Shen, SW; Huang, TY; Lehnen, P; Chien, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 11 of 11