High-density MIM capacitors with HfO(2) dielectrics

標題:	High-density MIM capacitors with HfO(2) dielectrics
作者:	Perng, TH Chien, CH Chen, CW Lehnen, P Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	MIM capacitors;HfO(2);dielectrics
公開日期:	22-十二月-2004
摘要:	Metal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.tsf.2004.08.148 http://hdl.handle.net/11536/25540
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2004.08.148
期刊:	THIN SOLID FILMS
Volume:	469
Issue:
起始頁:	345
結束頁:	349
顯示於類別：	會議論文

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