標題: | High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics |
作者: | Ding, SJ Hu, H Lim, HF Kim, SJ Yu, XF Zhu, CX Li, MF Cho, BJ Chan, DSH Rustagi, SC Yu, MB Chin, A Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | atomic layer deposition (ALD);HfO2-Al2O3 laminate;high-k;metal-insulator-metal (MIM) capacitor |
公開日期: | 1-十二月-2003 |
摘要: | For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications. |
URI: | http://dx.doi.org/10.1109/LED.2003.820664 http://hdl.handle.net/11536/27357 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2003.820664 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 24 |
Issue: | 12 |
起始頁: | 730 |
結束頁: | 732 |
顯示於類別: | 期刊論文 |