High-density MIM capacitors with HfO(2) dielectrics

doi:10.1016/j.tsf.2004.08.148

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Perng, TH	en_US
dc.contributor.author	Chien, CH	en_US
dc.contributor.author	Chen, CW	en_US
dc.contributor.author	Lehnen, P	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:37:09Z	-
dc.date.available	2014-12-08T15:37:09Z	-
dc.date.issued	2004-12-22	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2004.08.148	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25540	-
dc.description.abstract	Metal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	MIM capacitors	en_US
dc.subject	HfO(2)	en_US
dc.subject	dielectrics	en_US
dc.title	High-density MIM capacitors with HfO(2) dielectrics	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.tsf.2004.08.148	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	469	en_US
dc.citation.issue		en_US
dc.citation.spage	345	en_US
dc.citation.epage	349	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000225724300058	-
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