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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
1-Feb-2009Characteristics of In(Ga)As quantum ring infrared photodetectorsLing, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2009Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 KLing, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2009Detection wavelength and device performance tuning of InAs QDIPs with thin AlGaAs layersWang, S. Y.; Ling, H. S.; Lo, M. C.; Lee, C. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2020Development of a Parallel Explicit Finite-Volume Euler Equation Solver using the Immersed Boundary Method with Hybrid MPI-CUDA ParadigmKuo, F. A.; Chiang, C. H.; Lo, M. C.; Wu, J. S.; 機械工程學系; Department of Mechanical Engineering
2008Energy dependent carrier relaxation in self-assembled InAs/GaAs quantum dotsLing, H. S.; Lee, C. P.; Wang, S. Y.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jun-2008Energy-dependent carrier relaxation in self-assembled InAs quantum dotsLing, H. S.; Lee, C. P.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-May-2008High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layerLing, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2007Temperature dependent responsivity of quantum dot infrared photodetectorsWang, S. Y.; Lo, M. C.; Hsiao, H. Y.; Ling, H. S.; Lee, C. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 8 of 8