Title: Temperature dependent responsivity of quantum dot infrared photodetectors
Authors: Wang, S. Y.
Lo, M. C.
Hsiao, H. Y.
Ling, H. S.
Lee, C. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: quantum dot;intersubband;infrared detector
Issue Date: 1-Apr-2007
Abstract: Temperature dependent behavior of the responsivity of InAs/GaAs quantum dot infrared photoderectors was investigated with detailed measurement of the current gain. The current gain varied about two orders of magnitude with 100 K temperature change. Meanwhile, the change in quantum efficiency is within a factor of 10. The dramatic change of the current gain is explained by the repulsive coulomb potential of the extra carriers in the QDs. With the measured current gain, the extra carrier number in QDs was calculated. More than one electron per QD could be captured as the dark current increases at 150 K. The extra electrons in the QDs elevated the Fermi level and changed the quantum efficiency of the QDIPs. The temperature dependence of the responsivity was qualitatively explained with the extra electrons. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.infrared.2006.10.027
http://hdl.handle.net/11536/10953
ISSN: 1350-4495
DOI: 10.1016/j.infrared.2006.10.027
Journal: INFRARED PHYSICS & TECHNOLOGY
Volume: 50
Issue: 2-3
Begin Page: 166
End Page: 170
Appears in Collections:Articles


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