Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

標題:	Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
作者:	Ling, Hong-Shi Wang, Shiang-Yu Lee, Chien-Ping Lo, Ming-Cheng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices
公開日期:	1-一月-2009
摘要:	We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
URI:	http://dx.doi.org/10.1109/LPT.2008.2009130 http://hdl.handle.net/11536/7849
ISSN:	1041-1135
DOI:	10.1109/LPT.2008.2009130
期刊:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	21
Issue:	1-4
起始頁:	118
結束頁:	120
顯示於類別：	期刊論文

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