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Browsing by Author Loong, WA

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Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
1-Jun-2000AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmakingLoong, WA; Lin, CM; 應用化學系; Department of Applied Chemistry
1-Dec-2000AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithographyLin, CM; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Jun-2002Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithographyLin, CM; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Nov-2000Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and kLin, CM; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Sep-2001The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nmLoong, WA; Lin, CM; Tseng, SP; Yeh, WL; 應用化學系; Department of Applied Chemistry
1-Mar-2006Modified reflectance-transmittance method for the metrology of thin film optical propertiesYeh, KT; Lin, CH; Hu, JR; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Sep-2001The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithographyLin, CM; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Apr-2006Simulations of mask error enhancement factor in 193nm immersion lithographyYeh, KT; Loong, WA; 應用化學系; Department of Applied Chemistry
1999Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nmLin, CM; Chang, KW; Lee, MD; Loong, WA; 應用化學系; Department of Applied Chemistry
1-Feb-1997Study on optimization of annular off-axis illumination using Taguchi method for 0.35 mu m dense line/spaceLoong, WA; Tseng, JC; Chen, TC; Lung, CA; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-Jan-1996TiNx as a new embedded material for attenuated phase shift maskLoong, WA; Chen, TC; Tseng, JC; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-May-1999TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nmLin, CM; Loong, WA; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-Mar-1998TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and kLoong, WA; Chen, CW; Chang, YH; Lin, CM; Cui, Z; Lung, CA; 應用化學系; Department of Applied Chemistry
Showing results 1 to 13 of 13