標題: | AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography |
作者: | Lin, CM Loong, WA 應用化學系 Department of Applied Chemistry |
關鍵字: | high transmittance;attenuated phase-shifting mask;chemical composition;optical property;scattering bar;Taguchi method |
公開日期: | 1-十二月-2000 |
摘要: | AlSixOy (Al : Si : O = 1 : 0.36 : 0.88) thin film has the potential for use as a new and high-transmittance (T% similar to 35%) embedded layer of an attenuated phase-shifting mask (AttPSM) in 193 nm lithography. Increasing the compositions of Al2O3, SiO2 and other oxides increases n and decreases k in AlSixOy. Compared to a conventional AttPSM (T% < 10%), the high-T% AttPSM assisted by opaque Cr scattering bars can achieve a greater depth of focus, 0.45 <mu>m for a 0.10 mum isolated line. Under the conditions of BCl3/Cl-2 = 30/7 seem, chamber pressure 3 mTorr; source power 1400 W and RF bias power 30 W, the etching selectivity of AlSixOy over positive resist EP-1EG is 7.7 : 1. Under those of BCl3/Cl-2/O-2 = 35/7/3.2 seem, the selectivity of AlSixOy over substrate fused silica is 5.8 : 1. A 0.25-mum-line/space (1 : 1) etched pattern was successfully fabricated using AlSixOy as an embedded layer. |
URI: | http://dx.doi.org/10.1143/JJAP.39.6801 http://hdl.handle.net/11536/30114 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.39.6801 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 39 |
Issue: | 12B |
起始頁: | 6801 |
結束頁: | 6806 |
顯示於類別: | 會議論文 |