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Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
2007Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bendingWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistorsWang, M. C.; Chang, T.-C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stressWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Lin, Y. P.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-Nov-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-Nov-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
9-Jul-2007n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
7-May-2007Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistorWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Schottky barrier height for the photo leakage current transformation of a-Si : H TFTsWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
3-Dec-2007Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage currentWang, M. C.; Chang, T. C.; Liu, P. T.; Li, Y. Y.; Huang, F. S.; Mei, Y. J.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
6-Aug-2007Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Huang, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
Showing results 1 to 10 of 10