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公開日期標題作者
1-一月-2020Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting TransistorLan, Hao-Yu; Tseng, I-Chen; Lin, Yung-Hsiang; Chang, Shu-Wei; Wu, Chao-Hsin; 光電工程學系; Department of Photonics
17-十二月-2014Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxyYu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi; 光電系統研究所; Institute of Photonic System
1-十二月-2015Control of optical loss in GaN-based planar cavitiesYing, L. Y.; Hu, X. L.; Liu, W. J.; Zhang, J. Y.; Zhang, B. P.; Kuo, H. C.; 光電工程學系; Department of Photonics
1-一月-2020Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTsShrestha, Niraj Man; Li, Yiming; Chen, Chao-Hsuan; Sanyal, Indraneel; Tarng, Jenn-Hawn; Chyi, Jen-Inn; Samukawa, Seiji; 交大名義發表; 電機工程學系; 電信工程研究所; National Chiao Tung University; Department of Electrical and Computer Engineering; Institute of Communications Engineering
29-七月-2011Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxyWong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin; 材料科學與工程學系; 光電學院; 電子工程學系及電子研究所; Department of Materials Science and Engineering; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-三月-2009The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxyWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
5-七月-2017Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxySusanto, Iwan; Tsou, Tsung-Han; Yang, Zu-Po; Lee, Chao-Yu; Li, Hui; Yu, Ing-Song; 光電系統研究所; Institute of Photonic System
25-六月-2017Effects of substrate and annealing on GaN films grown by plasma-assisted molecular beam epitaxyYang, Zu-Po; Tsou, Tsung-Han; Lee, Chao-Yu; Kan, Ken-Yuan; Yu, Ing-Song; 光電系統研究所; Institute of Photonic System
1-九月-2020Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor depositionZheng, Xia-Xi; Lin, Chun-Hsiung; Ueda, Daisuke; Chang, Edward-Yi; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
29-十二月-2014Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surfaceChiang, Yen Chih; Lin, Bing Cheng; Chen, Kuo Ju; Lin, Chien Chung; Lee, Po Tsung; Kuo, Hao Chung; 光電系統研究所; 照明與能源光電研究所; 光電工程學系; 光電工程研究所; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Photonics; Institute of EO Enginerring
1-三月-2011Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxyChen, Kuei-Ming; Wu, Yin-Hao; Yeh, Yen-Hsien; Chiang, Chen-Hao; Chen, Kuei-You; Lee, Wei-I.; 電子物理學系; Department of Electrophysics
1-十二月-2019The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxySusanto, Iwan; Tsai, Chi-Yu; Fachruddin; Rahmiati, Tia; Ho, Yen-Ten; Tsai, Ping-Yu; Yu, Ing-Song; 國際半導體學院; International College of Semiconductor Technology
15-九月-2015Interruption-free growth of 10 mu m-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxyChen, Y. A.; Kuo, C. H.; Wu, J. P.; Chang, C. W.; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
九月-2016Light Emission Characteristics of Nonpolar a-Plane GaN-Based Photonic Crystal Defect CavitiesKao, Tsung Sheng; Wu, Tzeng-Tsong; Tsao, Che-Wei; Lin, Jyun-Hao; Lin, Da-Wei; Huang, Shyh-Jer; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Su, Yan-Kuin; 光電工程學系; Department of Photonics
1-一月-2020Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV IlluminationNagarajan, Venkatesan; Chen, Kun-Ming; Lin, Hsin-Yi; Hu, Hsin-Hui; Huang, Guo-Wei; Lin, Chuang-Ju; Chen, Bo-Yuan; Anandan, Deepak; Singh, Sankalp Kumar; Wu, Chai-Hsun; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
九月-2016Multifacet Microrod Light-Emitting Diode With Full Visible Spectrum EmissionLi, Yun-Jing; Chang, Jet-Rung; Chang, Shih-Pang; Lin, Bo-Wen; Yeh, Yen-Hsien; Kuo, Hao-Chung; Cheng, Yuh-Jen; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
15-三月-2010Nanoindentation characterization of GaN epilayers on A-plane sapphire substratesLin, Meng-Hung; Wen, Hua-Chiang; Huang, Chih-Yung; Jeng, Yeau-Ren; Yau, Wei-Hung; Wu, Wen-Fa; Chou, Chang-Pin; 機械工程學系; Department of Mechanical Engineering
1-十一月-2010Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire SubstratesLin, Meng-Hung; Wen, Hua-Chiang; Jeng, Yeau-Ren; Chou, Chang-Pin; 機械工程學系; Department of Mechanical Engineering
15-四月-2015Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet lightChiang, Yen Chih; Lin, Chien Chung; Kuo, Hao Chung; 光電系統研究所; 照明與能源光電研究所; 光電工程學系; 光電工程研究所; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Photonics; Institute of EO Enginerring
2000Observation of second harmonic emission and three-photon fluorescence from Gallium-NitrideLee, CK; Kao, FJ; Wang, SC; Pan, CL; 光電工程學系; Department of Photonics
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