標題: Control of optical loss in GaN-based planar cavities
作者: Ying, L. Y.
Hu, X. L.
Liu, W. J.
Zhang, J. Y.
Zhang, B. P.
Kuo, H. C.
光電工程學系
Department of Photonics
關鍵字: GaN;VCSEL;Wide gap semiconductor;Optical loss;Vertical cavity surface emitting lasers;Gallium nitride;RCLED
公開日期: 1-十二月-2015
摘要: Optical losses in GaN-based resonant planar cavity are discussed and experimentally examined in respects of indium tin oxide (ITO) inner-cavity current spreading layer, the defect-rich GaN layer, and multi-quantum well (MQW) active region. Devices with different structures are adopted to study the optical loss. It is demonstrated that a thin ITO layer and a coupled MQW active region are essential to achieve a low loss and high Q-value cavity. The results show that low-loss MQW design is particularly important in fabricating high-Q value GaN-based planar cavities. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.spmi.2015.10.020
http://hdl.handle.net/11536/129550
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2015.10.020
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 88
起始頁: 561
結束頁: 566
顯示於類別:期刊論文