國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

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公開日期	標題	作者
1-七月-1995	BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR	LIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-六月-1991	THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION	CHANG, CY; LIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1996	High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P	Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995	SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	GUO, JD; FENG, MS; PAN, FM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1995	SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-九月-1995	SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-1994	TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P	LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1999	以低壓有機金屬氣相磊晶法成長氮砷化鎵磊晶層	張良肇; Liang-Chao Chang; 李威儀; Wei-I Lee; 電子物理系所

顯示 1 到 8 筆資料，總共 8 筆