SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

doi:10.1143/JJAP.34.L1107

Title:	SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:	WANG, CJ WU, JW CHAN, SH CHANG, CY SZE, SM FENG, MS 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
Keywords:	GAINP;DELTA DOPING;LP-MOCVD;HALL-EFFECT;C-V
Issue Date:	1-Sep-1995
Abstract:	Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
URI:	http://dx.doi.org/10.1143/JJAP.34.L1107 http://hdl.handle.net/11536/149134
ISSN:	0021-4922
DOI:	10.1143/JJAP.34.L1107
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume:	34
Appears in Collections:	Articles