標題: SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者: WANG, CJ
WU, JW
CHAN, SH
CHANG, CY
SZE, SM
FENG, MS
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: GAINP;DELTA DOPING;LP-MOCVD;HALL-EFFECT;C-V
公開日期: 1-Sep-1995
摘要: Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
URI: http://dx.doi.org/10.1143/JJAP.34.L1107
http://hdl.handle.net/11536/149134
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.L1107
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 34
Appears in Collections:Articles