SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

doi:10.1143/JJAP.34.L1107

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WANG, CJ	en_US
dc.contributor.author	WU, JW	en_US
dc.contributor.author	CHAN, SH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	SZE, SM	en_US
dc.contributor.author	FENG, MS	en_US
dc.date.accessioned	2019-04-02T05:59:13Z	-
dc.date.available	2019-04-02T05:59:13Z	-
dc.date.issued	1995-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.34.L1107	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149134	-
dc.description.abstract	Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.	en_US
dc.language.iso	en_US	en_US
dc.subject	GAINP	en_US
dc.subject	DELTA DOPING	en_US
dc.subject	LP-MOCVD	en_US
dc.subject	HALL-EFFECT	en_US
dc.subject	C-V	en_US
dc.title	SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.34.L1107	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS	en_US
dc.citation.volume	34	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RV19100004	en_US
dc.citation.woscount	9	en_US
顯示於類別：	期刊論文