Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition

Abstract

We have investigated the effects of rapid thermal annealing on the Si delta-doped GaInP. The spatial localization of carriers was derived and used to determine the diffusion coefficient of Si in GaInP by the capacitance-voltage measurement. We found an unusual mobility change of Si delta-doped GaInP after annealing from Hall-effect measurement. The compensation effect of Si amphoteric property could not be used to explain this behavior. From photoluminescence spectra, it is suggested that the ordered/disordered transformation is the dominate factor for mobility increase after annealing. On the contrary, the degradation of quantum confinement in delta-doped structure by dopant diffusion after annealing is responsible for the decrease of mobility. Therefore, the behavior of mobility could be considered as a competition result of these two mechanisms.