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公開日期標題作者
1-五月-2014Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layerYu, Tung-Yuan; Pan, Fu-Ming; Chang, Cheng-Yi; Hu, Tien; Chen, Jenn-Fang; Wang, Jia-Feng; Lin, Cheng-Lu; Chen, Tsung-Han; Chen, Te-Ming; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
27-一月-2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmsIsmail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995氧化鋅變阻器之缺陷研究林于順; Lin, Yu-Shun; 李威儀; Wei-I Lee; 電子物理系所
2008氧空缺與相變化在氮化鈦/二氧化矽/鐵白金結構電阻式非揮發性隨機存取記憶體的影響張耀峰; Chang, Yao-Feng; 張俊彥; Chang, Chun-Yen; 電子研究所
2010金屬氧化物薄膜電晶體之特性研究與光電元件開發陳蔚宗; Chen, Wei-Tsung; 冉曉雯; Zan, Ｈsiao-Wen; 光電工程學系
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