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顯示 1 到 4 筆資料，總共 4 筆
公開日期標題作者
1-四月-2013Charge Quantity Influence on Resistance Switching Characteristic During Forming ProcessChu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-二月-2019Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial LayerTsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
十一月-2016Improving Thermal Stability and Interface State Density of High-kappa Stacks by Incorporating Hf into an Interfacial Layer on p-GermaniumTsai, Yi-He; Chou, Chen-Han; Shih, An-Shih; Jau, Yu-Hau; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Novel two-bit HfO2 nanocrystal nonvolatile flash memoryLin, YH; Chien, CH; Lin, CT; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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