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公開日期標題作者
1-七月-2008Effect of process variation on field emission characteristics in surface-conduction electron emittersLo, Hsiang-Yu; Li, Yiming; Tsai, Chih-Hao; Chao, Hsueh-Yung (Robert); Pan, Fu-Ming; 材料科學與工程學系; 電信工程研究所; Department of Materials Science and Engineering; Institute of Communications Engineering
1-十一月-1999Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interfaceLiu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2004The effects of hydrogen plasma treatment on the plasma-enhanced chemical vapor deposition a-SiC : H filmsChen, CF; Li, YW; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2001Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
九月-2016Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma TreatmentTsai, Ming-Li; Ko, Jun-Yu; Wang, Shin-Yuan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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