標題: | Effect of process variation on field emission characteristics in surface-conduction electron emitters |
作者: | Lo, Hsiang-Yu Li, Yiming Tsai, Chih-Hao Chao, Hsueh-Yung (Robert) Pan, Fu-Ming 材料科學與工程學系 電信工程研究所 Department of Materials Science and Engineering Institute of Communications Engineering |
關鍵字: | angle of inclination of surface;field emission;hydrogen plasma;Maxwell equations;nanogap;Pd;particle-in-cell (PIC) simulation;process variations;shape;surface-conduction electron emitters (SCEs);thin-film emitter;turn-on voltage |
公開日期: | 1-七月-2008 |
摘要: | In this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the type I exhibits high emission efficiency due to a stronger electric field around the apex and larger emission current among structures. The electron emission current is dependent upon the angle of inclination of surface. Hydrogen plasma treatment is also used to increase the edge roughness of the nanogap and thereby dramatically improve the field emission characteristics. For the nanogap with a separation of 90 nm, the turn-on voltage significantly reduces from 60 to 20 V after the hydrogen plasma treatment. |
URI: | http://dx.doi.org/10.1109/TNANO.2008.926347 http://hdl.handle.net/11536/8598 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2008.926347 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 7 |
Issue: | 4 |
起始頁: | 434 |
結束頁: | 439 |
顯示於類別: | 期刊論文 |