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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
1-Dec-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Dec-2008Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface TreatmentMa, Ming-Wen; Chiang, Tsung-Yu; Wu, Woei-Cherng; Chao, Tien-Sheng; Lei, Tan-Fu; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Feb-2003Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperaturesShye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999低介電常數材料在積體電路上之應用研究蘇醒; Hsing Su; 施敏; 張鼎張; Dr. Simon M. Sze; Dr. Ting-Chang Chang; 電子研究所
1999氧氣及氮氣電漿處理後之薄氧化層成長研究周文彬; Wen-Pin Chou; 羅正忠; Dr. Jen-Chung Lou; 電子研究所
Showing results 1 to 5 of 5