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公開日期標題作者
2008AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941VLo, M. H.; Li, Z. Y.; Chen, J. R.; Ko, T. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-九月-2008Carrier relaxation of ZnCdSe/ZnSe quantum wellsJang, Der-Jun; Lee, Meng-En; Chung, Yung-Hsien; Yang, Chu-Shou; Chou, Wu-Ching; 電子物理學系; Department of Electrophysics
1-一月-2020Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting TransistorLan, Hao-Yu; Tseng, I-Chen; Lin, Yung-Hsiang; Chang, Shu-Wei; Wu, Chao-Hsin; 光電工程學系; Department of Photonics
1-一月-2014DESIGN OF A NEAR-INFRARED SURFACE-EMITTING METALLIC NANOCAVITY WITH MULTIPLE QUANTUM WELLChou, Bo-Tsun; Lin, Sheng-Di; 交大名義發表; National Chiao Tung University
1-六月-2001A detailed study of non-uniform quantum well infrared photodetectorsWang, SY; Chin, YC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1998Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasersYen, ST; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-七月-2003Electrooptical properties of GaNAs/GaAs multiple quantum well structuresLee, JR; Chen, YY; Lu, CR; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics
1-一月-2014Improvement of carrier distribution by using thinner quantum well with different locationWang, Sheng-Wen; Lin, Da-Wei; Lee, Chia-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; 光電工程學系; Department of Photonics
2009InGaAs(N)/GaAs多層量子井的電光性研究曾淳俊; Tseng, Chun-Chun; 陳振芳; 電子物理系所
1999InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究王錦雄; Jiin-Shung Wang; 陳振芳; Jenn-Fang Chen; 電子物理系所
2005InGaAsN/GaAs量子井之成份波動效應謝佩珍; Pei-Chen Hsieh; 陳振芳; Jenn-Fang Chen; 電子物理系所
20-九月-2017Light energy transformation over a few nanometersHuang, Hung Ji; Liu, Bo-Heng; Su, James; Chen, Po-Jui; Lin, Chun-Ting; Chiang, Hai-Pang; Kao, Tsung Sheng; Chau, Yuan-Fong Chou; Kei, Chi-Chung; Hwang, Chi-Hung; 資訊工程學系; 光電工程學系; Department of Computer Science; Department of Photonics
2010Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laserSu, K. W.; Chen, Yi-Fan; Huang, S. C.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-十二月-1998Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dotsCheng, HH; Nicholas, RJ; Priest, A; Tsai, FY; Lee, CP; Sanchez-Dehesa, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrateTyan, SL; Shields, PA; Nicholas, RJ; Tsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2001A method of measuring the contribution of the image potential energy of the shallow impurity ground state in a quantum wellYang, TJ; Hsu, SY; 電子物理學系; Department of Electrophysics
2006MOCVD成長GaAsN/GaAs量子井的深層缺陷能階與能帶研究柯忠廷; Chung-Ting Ke; 陳振芳; Jenn-Fang Chen; 電子物理系所
9-三月-2016Optical properties of one- and two-dimensional excitons in m-plane ZnO/MgZnO multiple quantum wellsChen, H. R.; Tsai, C. Y.; Huang, Y. C.; Kuo, C. C.; Hsu, H. C.; Hsieh, W. F.; 光電工程學系; Department of Photonics
1-三月-2016Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal GateHsu, Ching-Yi; Chang, Chun-Yen; Chang, Edward Yi; Hu, Chenming; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2003Thermal annealing effects on the optical gain of InGaN/GaN quantum well structuresChen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA; Wang, SC; 光電工程學系; Department of Photonics
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