標題: | Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate |
作者: | Hsu, Ching-Yi Chang, Chun-Yen Chang, Edward Yi Hu, Chenming 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | InAs/GaSb;tunneling FET (TFET);quantum well;surface states;Fermi pinning;non-uniformity;dual-metal gate;steep turn-on |
公開日期: | 1-三月-2016 |
摘要: | Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the non-uniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing. |
URI: | http://dx.doi.org/10.1109/JEDS.2015.2514060 http://hdl.handle.net/11536/133496 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2015.2514060 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 4 |
Issue: | 2 |
起始頁: | 60 |
結束頁: | 65 |
顯示於類別: | 期刊論文 |