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公開日期標題作者
15-五月-2009Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoirHsieh, Hong-Wen; Yen, Shun-Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996Grain-boundary surface states of (Ba, Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical propertiesChen, LF; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996Grain-boundary surface states of (Ba, Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical propertiesChen, LF; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2009Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheresLin, Chia-Hung; Uen, Wu-Yih; Lan, Shan-Ming; Huang, Yen-Chin; Liao, Sen-Mao; Li, Zhen-Yu; Yang, Tsun-Neng; Ku, Chien-Te; Chen, Meng-Chu; Huang, Yu-Hsiang; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
10-三月-1999Photoemission study of surface state intensity resonance and dispersion of Be2C(100)Tzeng, CT; Yuh, JY; Lo, WS; Chu, RY; Tsuei, KD; 光電工程學系; Department of Photonics
1-三月-2016Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal GateHsu, Ching-Yi; Chang, Chun-Yen; Chang, Edward Yi; Hu, Chenming; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics