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公開日期標題作者
1-五月-2010Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETsChen, William P. N.; Kuo, Jack J. Y.; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2012Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETsWang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2002Novel chip standby current prediction model and ultrathin gate oxide scaling limitSu, HD; Chiou, BS; Lu, PC; Chang, MH; Lee, KH; Chao, CP; See, YC; Sung, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2007Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTsKuo, Yan-Fu; Tai, Ya-Hsiang; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-一月-2008Temperature dependence of excitonic emission in cubic CdSe thin filmChia, C. H.; Yuan, C. T.; Ku, J. T.; Yang, S. L.; Chou, W. C.; Juang, J. Y.; Hsieh, S. Y.; Chiu, K. C.; Hsu, J. S.; Jeng, S. Y.; 電子物理學系; Department of Electrophysics
1-九月-2010Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETsWang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Liao, Kuo-Hsiang; Chen, Bo-Yuan; Huang, Sheng-Yi; Hung, Cheng-Chou; Huang, Guo-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010先進金氧半場效電晶體考慮溫度相依之高頻小訊號及雜訊特性分析王生圳; Wang, Sheng-Chun; 蘇彬; Su, Pin; 電子研究所
2001共軛高分子水平元件中電荷傳輸特性賴宜君; Yi-Chun Lai; 孟心飛; 洪勝富; Hsin-Fei Meng; Sheng-Fu Horng; 物理研究所
2015應變在矽無接面奈米線電晶體上之效應呂玉琦; Lu, Yu-Chi; 趙天生; Chao, Tien-Sheng; 電子物理系所
顯示 1 到 9 筆資料，總共 9 筆