標題: Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs
作者: Chen, William P. N.
Kuo, Jack J. Y.
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Mobility;MOSFET;strain silicon;temperature dependence
公開日期: 1-五月-2010
摘要: This letter provides an experimental assessment of temperature dependence of mobility for advanced short-channel strained devices. By accurate split C-V mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on the temperature dependence of mobility and mobility enhancement in nanoscale pMOSFETs. Our study indicates that the strain sensitivity of hole mobility becomes less with increasing temperature, and it is consistent with previous mechanical-bending result. Furthermore, the carrier-scattering mechanism for the pMOSFET under uniaxial compressive strain tends to be more phonon limited at a given vertical electric field, which explains the larger drain current sensitivity to temperature present in the compressively strained PFET.
URI: http://dx.doi.org/10.1109/LED.2010.2044553
http://hdl.handle.net/11536/5451
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2044553
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 5
起始頁: 414
結束頁: 416
顯示於類別:期刊論文


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