標題: Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
作者: Lin, HN
Chen, HW
Ko, CH
Ge, CH
Lin, HC
Huang, TY
Lee, WC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFETs;scattering;uniaxial strain
公開日期: 1-九月-2005
摘要: Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms,of ballistic efficiency and injection velocity.
URI: http://dx.doi.org/10.1109/LED.2005.853640
http://hdl.handle.net/11536/13325
ISSN: 0741-3106
DOI: 10.1109/LED.2005.853640
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 9
起始頁: 676
結束頁: 678
顯示於類別:期刊論文


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