標題: | Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs |
作者: | Lin, HN Chen, HW Ko, CH Ge, CH Lin, HC Huang, TY Lee, WC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | MOSFETs;scattering;uniaxial strain |
公開日期: | 1-九月-2005 |
摘要: | Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms,of ballistic efficiency and injection velocity. |
URI: | http://dx.doi.org/10.1109/LED.2005.853640 http://hdl.handle.net/11536/13325 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.853640 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 9 |
起始頁: | 676 |
結束頁: | 678 |
顯示於類別: | 期刊論文 |