Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs

Abstract

This paper investigates the temperature dependence of phonon-scattering-limited mobility mu(PH) for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility mu SR and mu(PH) are successfully decoupled. This paper indicates that the temperature sensitivity of mu(PH) is proportional to T(-1.75) for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.