標題: | Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs |
作者: | Chen, William P. N. Kuo, Jack J. Y. Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | MOSFET;strain silicon;surface-roughness-limited mobility;uniaxial |
公開日期: | 1-二月-2011 |
摘要: | This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (mu(SR)) under process-induced uniaxial strain and compares the strain sensitivity between mu(SR) and phonon-scattering-limited mobility (mu(PH)). By an accurate split C-V mobility extraction method, the mu(SR) of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that mu(SR) has stronger stress sensitivity than mu(PH). Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations. |
URI: | http://dx.doi.org/10.1109/LED.2010.2090126 http://hdl.handle.net/11536/25818 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2090126 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 2 |
起始頁: | 113 |
結束頁: | 115 |
顯示於類別: | 期刊論文 |