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公開日期標題作者
2004CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-一月-2004CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-一月-2004Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applicationsChang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-十一月-2004Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect applicationChang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆